Local structure analysis of sputter-deposited metal nitride thin film using He ion yield XAFS
Takahashi Masao; Sugiyama Hideyuki; Kikkawa Shinichi; Kanamaru Fumikazu; Harada Makoto; Watanabe Iwao
Abstract:He ion yield XAFS measurements under He atmosphere at ambient pressure have been adopted for analyzing the local structure of several metal nitride thin films. XANES spectra and EXAFS parameters for zinc blend-type iron nitride, obtained by the yield XAFS, have coincided with those obtained using the conventional transmission XAFS. The yield XAFS measurements employing the grazing incidence technique have been presented for the determination of chemical species on the surface of Ti-Al-N films after the erosion experiment, showing the followings; the corrosion products on the film surface after heating at 600 deg. Under O2 gas flow were Ti based oxides, either TiO2 or Al2TiO5. Al2TiO5 was slightly yielded not only on Al rich Ti1-xAlxN but also on Ti rich Ti1-xAlxN films after aging in a distilled water for 2 weeks. The local structure around Fe for Si Fe N films before and after annealing in an H2 atmosphere at several temperatures has been investigated. The as deposited Si Fe N film contained Fe with local structure similar to that of FeN sub y (y > 0.5) and such local structure was not broken against the annealing at 300 deg.. Annealing at 500 deg. Changed the local structure around Fe, I.e., N bonded to Fe was almost eliminated and Fe formed a fine particle similar to a- Fe. Key Words:XAFS, XANES, EXAFS, local structure, nitride, thin film, He ion yield, electron yield